| PART |
Description |
Maker |
| C3M0030090K |
Silicon Carbide Power MOSFET C3M MOSFET Technology
|
Cree, Inc
|
| CPMF-1200-S080B |
Silicon Carbide MOSFET
|
CREE
|
| C2M0080120D |
Silicon Carbide Power MOSFET Z-FETTM MOSFET
|
Cree, Inc
|
| C2M0280120D |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
| C3M0280090D |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
| GR160MT12K |
Silicon Carbide Power MOSFET
|
GeneSiC Semiconductor, ...
|
| GR160MT12J |
Silicon Carbide Power MOSFET
|
GeneSiC Semiconductor, ...
|
| SCT3040KLGC11 |
N-channel Silicon Carbide Power MOSFET
|
ROHM
|
| SCT3030KL SCT3030KLC11 |
N-channel Silicon Carbide Power MOSFET
|
ROHM
|
| 92005A120 C2M0080120D 74270011 CRD8FF1217P-1 |
CREE Silicon Carbide MOSFET Evaluation Kit
CREE Silicon Carbide MOSFET Evaluation Kit
|
Cree, Inc
|
| UPSC600 UPSC200 UPSC400 |
Silicon Carbide Schottky Rectifiers
Silicon Carbide (SiC) Schottky
|
MICROSEMI[Microsemi Corporation]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
|
